Available gases are: SF6, C4F8, CHF3, O2, Ar, N2, CF4, CH2F2, C2F6, and He.įor recipes and materials specific etch rate information you can view our process development file. The first mode is etching by SF6 followed by wall passivation which is achieved through polymerization of C4F8 on the side walls of the etched features, protecting it from further etching and allowing the next etch step to be directional. The DRIE system uses the Bosch process which is a pulsed etching alternating repeatedly between two modes to achieve vertical pattern. For other materials dry etch please use the Oxford PlasmaLab 80 ICP. The CNI Fl DRIE etch system is a metal free system dedicated for silicon, silicon oxide, and silicon nitride etch. DC bias can be applied to the substrate to increase directionality of ions into the substrate. This technique allows fabrication of high aspect ratio silicon features with vertical sidewalls The Cobra ICP etch sources produce a high density of reactive species at relatively low pressure values. High etch rates are achieved by the presence of high ion and radical densities. It is a multipurpose fluorocarbon-based system that provides users anisotropic etching of silicon, silicon oxide, and other dielectric materials.
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#Oxford plasmalab system 100 full#
Inductively Coupled Plasma (ICP) etching is a technique which uses a radio frequency (RF) energy coupled into a low pressure gas by an inductive coil mounted on the outside of a quartz window. We offer a full range of refurbished and used plasma etchers & PECVD equipment from brands such as Yield, Oxford, Tepla, Alcatel, and many other brands. The Oxford Plasmalab 100 is an Inductive Coupled Plasma Reactive Ion Etching (ICP RIE) tool.